View APT50M75JFLL04_1211773.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT50M75JFLL
500V 51A
S G D
0.075
S
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT50M75JFLL UNIT Volts Amps
500 51 204 30 40 460 3.68 -55 to 150 300 51 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.075 250 1000 100 3 5
(VGS = 10V, ID = 25.5A)
Ohms A nA Volts
9-2004 050-7034 Rev D
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT50M75JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 51A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 51A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 51A, RG = 5 ID = 51A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5590 1180 85 125 33 65 8 17 21 3 675 650 1110 755
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
51 228 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -51A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -51A, di/dt = 100A/s) Reverse Recovery Charge (IS = -51A, di/dt = 100A/s) Peak Recovery Current (IS = -51A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
280 600 1.9 5.7 15 23
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.30
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 1.92mH, RG = 25, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID51A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25 0.20
0.9
0.7
0.15
0.5 Note:
PDM
9-2004
0.10
0.3
t1 t2
050-7034 Rev D
JC
Z
0.05 0
0.1 0.05 10-5 10-4
SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
1.0
Typical Performance Curves
Junction temp. (C) RC MODEL
120 100 80 60 40
APT50M75JFLL
15 &10V 8V 7.5V
ID, DRAIN CURRENT (AMPERES)
0.0409
0.0246F
7V
Power (watts)
0.255
0.406F
6.5V
0.00361 Case temperature. (C)
148F
6V 20 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2
V
GS
0
140
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160
NORMALIZED TO = 10V @ I = 25.5A
D
120 100 80 60 40 20 0 TJ = +125C TJ = +25C TJ = -55C
1.1 VGS=10V 1.0 VGS=20V
0.9
012 34567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0.8
0
60
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
50 40 30 20 10 0 25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
= 25.5A
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
V
GS
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7034 Rev D
9-2004
204 100
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000 100S
C, CAPACITANCE (pF)
APT50M75JFLL
Ciss
ID, DRAIN CURRENT (AMPERES)
1,000
Coss
10
1mS 10mS TC =+25C TJ =+150C SINGLE PULSE
100
Crss
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I = 51A VDS=100V D VDS=250V 12 VDS=400V 8
1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
10
TJ =+150C
TJ =+25C
10
4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 100 90 80
td(on) and td(off) (ns)
0
0
1 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 110
V
DD G
= 333V
R
= 5
td(off)
V
DD G
100 90 80
tr and tf (ns)
T = 125C
J
L = 100H
70 60 50 40 30 20 10
= 333V
tf
R
= 5
T = 125C
J
70 60 50 40 30 20 10 tr
L = 100H
td(on)
1 10
50 60 70 80 90 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
20
30
40
50 60 70 80 90 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3000 2500
SWITCHING ENERGY (J)
V I
DD
10
20
30
40
2500
= 333V
= 333V
R
= 5
D J
= 51A
SWITCHING ENERGY (J)
2000
T = 125C
J
T = 125C L = 100H E ON includes diode reverse recovery
L = 100H EON includes diode reverse recovery
Eon
Eoff
2000 1500 1000 500 0
1500
1000
Eon
9-2004
500
050-7034 Rev D
Eoff
50 60 70 80 90 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
20
30
40
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT50M75JFLL
90 %
Gate Voltage 10 % t d(on) T J = 125 C Drain Current 90% tr 5% 10% Switching Energy 5% Drain Voltage
Gate Voltage t d(off) tf 90% Drain Voltage
TJ = 125 C
0 10%
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7034 Rev D
9-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

▲Up To Search▲

Price & Availability of APT50M75JFLL04

	To Download APT50M75JFLL04 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .